FTD2019A no.7911-1/4 features ? low on-resistance. ? 2.5v drive. ? mount height 1.1mm. ? composite type, facilitating high-density mounting. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit drain-to-source voltage v dss 30 v gate-to-source voltage v gss 12 v drain current (dc) i d 6a drain current (pulse) i dp pw 10 m s, duty cycle 1% 40 a allowable power dissipation p d mounted on a ceramic board (1000mm 2 5 0.8mm)1unit 1.3 w total dissipation p t mounted on a ceramic board (1000mm 2 5 0.8mm) 1.4 w channel temperature tch 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0 30 v zero-gate voltage drain current i dss v ds =30v, v gs =0 1 m a gate-to-source leakage current i gss v gs = 8v, v ds =0 10 m a cutoff voltage v gs (off) v ds =10v, i d =1ma 0.5 1.3 v forward transfer admittance ? yfs ? v ds =10v, i d =6a 7.8 13 s r ds (on)1 i d =6a, v gs =4v 19 26 m w static drain-to-source on-state resistance r ds (on)2 i d =3a, v gs =3.1v 21 32 m w r ds (on)3 i d =3a, v gs =2.5v 23 34 m w input capacitance ciss v ds =10v, f=1mhz 1430 pf output capacitance coss v ds =10v, f=1mhz 195 pf reverse transfer capacitance crss v ds =10v, f=1mhz 38 pf marking : d2019a continued on next page. sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : enn7911 any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. 93004 ts im tb-00000046 FTD2019A n-channel silicon mosfet transistor load switching applications
FTD2019A no.7911-2/4 continued from preceding page. ratings parameter symbol conditions min typ max unit turn-on delay time t d (on) see specified test circuit. 24 ns rise time t r see specified test circuit. 165 ns turn-off delay time t d (off) see specified test circuit. 110 ns fall time t f see specified test circuit. 130 ns total gate charge qg v ds =10v, v gs =4v, i d =6a 19 nc gate-to-source charge qgs v ds =10v, v gs =4v, i d =6a 3.2 nc gate-to-drain miller charge qgd v ds =10v, v gs =4v, i d =6a 4.5 nc diode forward voltage v sd i s =6a, v gs =0 0.83 1.2 v package dimensions electrical connection unit : mm 2155a switching time test circuit 1 : drain1 2 : source1 3 : source1 4 : gate1 5 : gate2 6 : source2 7 : source2 8 : drain2 sanyo : tssop8 6.4 3.0 0.425 0.65 4.5 0.95 (0.95) 0.5 0.125 85 14 0.25 1.0 0.1 pw=10 m s d.c. 1% p. g 50 w g s d i d =6a r l =2.5 w v dd =15v v out FTD2019A v in 4v 0v v in 8765 12 3 4 1 : drain1 2 : source1 3 : source1 4 : gate1 5 : gate2 6 : source2 7 : source2 8 : drain2 top view
FTD2019A no.7911-3/4 i d -- v ds it07368 i d -- v gs it07369 0 2.0 1.8 0.2 r ds (on) -- v gs it07370 r ds (on) -- ta it07371 0 10 60 35 40 45 50 55 10 2468 --75 --50 --25 0 25 50 75 100 125 150 175 0 0 6 0.40 0.05 0.10 0.15 0.20 0.25 0.30 0.35 1 2 3 4 5 0 8 0.4 0.6 0.8 1.0 1.2 1.4 1.6 3 2 1 4 5 6 7 30 20 25 15 10 40 35 25 30 20 15 sw time -- i d it07374 it07373 0.3 0.4 0.5 0.6 0.7 0.8 1.0 0.9 0.01 0.1 10 7 5 3 2 7 5 3 2 1.0 7 5 3 2 i f -- v sd it07372 ? y fs ? -- i d 0.1 0.01 23 57 23 5 5 77 23 1.0 10 1.0 10 2 3 5 7 7 2 3 5 2 3 5 0.1 1000 100 10 3 2 5 7 3 2 5 7 3 2 5 7 10000 0.001 0.01 0.1 23 57 23 57 23 57 7 23 5 1.0 10 0 10 100 3 7 5 3 2 1000 7 5 3 2 2 30 5 10152025 ciss, coss, crss -- v ds it07375 4.0v 3.0v 2.5v 5.0v v gs =1.5v ta=75 c --25 c 25 c v ds =10v ta= --25 c 75 c 25 c v gs =0 ta= 75 c --25 c v dd =15v v gs =4v t d (off) t d (on) f=1mhz ciss coss crss v ds =10v ta=25 c i d =3a 25 c t r t f 6a i d = 6 a, v gs =4.0v i d = 3 a, v gs =2.5v i d = 3 a, v gs =3.1v drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a drain-to-source voltage, v ds -- v ciss, coss, crss -- pf diode forward voltage, v sd -- v forward current, i f -- a drain current, i d -- a switching time, sw time -- ns drain current, i d -- a forward transfer admittance, ? y fs ? -- s gate-to-source voltage, v gs -- v static drain-to-source on-state resistance, r ds (on) -- m w static drain-to-source on-state resistance, r ds (on) -- m w ambient temperature, ta -- c
FTD2019A no.7911-4/4 ps specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of september, 2004. specifications and information herein are subject to change without notice. a s o 1.0 10 2 3 5 7 2 3 5 7 2 3 5 7 100 2 3 5 7 0.1 0.01 23 5 3 5 7 23 57 23 57 0.01 0.1 1.0 10 2 it07377 v gs -- qg it07376 0 0 20 40 0.2 0.4 0.6 0.8 60 1.2 80 100 120 1.6 1.0 1.4 1.3 140 160 p d -- ta it07378 p d -- p d 0 0 0.2 0.4 0.2 0.6 0.6 0.4 0.8 1.0 0.8 1.0 1.4 1.3 1.2 1.4 1.2 1.3 it07379 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 20 14 12 16 18 4.0 4 28 610 v ds =10v i d =6a <10 m s 1ms 100 m s 100ms 10ms i d =6a dc operation (ta=25 c) i dp =40a operation in this area is limited by r ds (on). drain-to-source voltage, v ds -- v drain current, i d -- a total gate charge, qg -- nc gate-to-source voltage, v gs -- v ta=25 c single pulse mounted on a ceramic board (1000mm 2 5 0.8mm) 1unit ambient temperature, ta -- c allowable power dissipation, p d -- w allowable power dissipation(fet2), p d -- w allowable power dissipation(fet1), p d -- w total dissipation 1 unit mounted on a ceramic board (1000mm 2 5 0.8mm) 1unit mounted on a ceramic board (1000mm 2 5 0.8mm) 1unit
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